IRF7807APBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 4.5V

Turn-Off Delay Time :

25 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

Transistor Element Material :

SILICON

Packaging :

Tube

Number of Elements :

1

RoHS Status :

RoHS Compliant

Terminal Position :

Dual

Dual Supply Voltage :

30V

Mount :

Surface Mount

Lead Free :

Contains Lead, Lead Free

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Power Dissipation-Max :

2.5W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation :

2.5W

REACH SVHC :

No SVHC

Number of Pins :

8

Vgs(th) (Max) @ Id :

1V @ 250μA

Resistance :

25mOhm

Current Rating :

6.6A

Row Spacing :

6.3 mm

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

8

Width :

3.9878mm

Fall Time (Typ) :

6 ns

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±12V

Voltage - Rated DC :

30V

Published :

2004

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Continuous Drain Current (ID) :

8.3A

Threshold Voltage :

1V

Height :

1.4986mm

FET Type :

N-Channel

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Length :

4.9784mm

Pulsed Drain Current-Max (IDM) :

66A

Nominal Vgs :

1 V

Series :

HEXFET®

Terminal Form :

Gull wing

Turn On Delay Time :

12 ns

Transistor Application :

SWITCHING

Radiation Hardening :

No

Rise Time :

17ns