IRF7807

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Number of Terminations :

8

Packaging :

Tube

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G8

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Pulsed Drain Current-Max (IDM) :

66A

DS Breakdown Voltage-Min :

30V

JEDEC-95 Code :

MS-012AA

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 4.5V

FET Type :

N-Channel

ECCN Code :

EAR99

Number of Elements :

1

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

8.3A

Power Dissipation-Max :

2.5W Ta

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.025Ohm

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Operating Temperature :

-55°C~150°C TJ

Published :

1999