IRF7805ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

2080pF @ 15V

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.25V @ 250μA

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Fall Time (Typ) :

3.7 ns

Length :

4.9784mm

Published :

2005

Resistance :

6.8mOhm

Terminal Position :

Dual

Number of Pins :

8

Contact Plating :

Tin

Rise Time :

10ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Mount :

Surface Mount

Height :

1.4986mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Avalanche Energy Rating (Eas) :

72 mJ

Number of Terminations :

8

Continuous Drain Current (ID) :

16A

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

MS-012AA

Turn On Delay Time :

11 ns

Width :

3.9878mm

FET Type :

N-Channel

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

30V

Pulsed Drain Current-Max (IDM) :

120A

Power Dissipation :

2.5W

Nominal Vgs :

2.25 V

REACH SVHC :

No SVHC

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.5W Ta

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 16A, 10V

Number of Elements :

1

Current Rating :

16A

Turn-Off Delay Time :

14 ns

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V