IRF7805ZTRPBF-1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max (Abs) :

2.5 W

Number of Pins :

8

Lifecycle Status :

Production (Last Updated: 2 years ago)

Configuration :

Single

Package Quantity :

4000

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

2080 pF @ 15 V

Power Dissipation (Max) :

2.5W (Ta)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Min Operating Temperature :

-55 °C

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

30 V

Surface Mount :

yes

FET Feature :

-

Packaging :

Tape and Reel

Max Operating Temperature :

150 °C

Gate to Source Voltage (Vgs) :

20 V

Subcategory :

FET General Purpose Power

Package :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

16 A

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Manufacturer :

Infineon Technologies AG

Polarity/Channel Type :

N-Channel

Mounting Type :

Surface Mount

Supplier Device Package :

8-SOIC

Gate Charge (Qg) (Max) @ Vgs :

27 nC @ 4.5 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS :

Compliant

Continuous Drain Current (ID) :

16 A

Current - Continuous Drain (Id) @ 25°C :

16A (Ta)

On-State Resistance :

6.8 mΩ

Rds On (Max) @ Id, Vgs :

6.8mOhm @ 16A, 10V

Mount :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Contact Plating :

Tin

Rise Time :

10 ns

FET Type :

N-Channel

Max Junction Temperature (Tj) :

150 °C

Series :

HEXFET®

Product Status :

Obsolete