IRF7805ZPBF
- Mfr.Part #
- IRF7805ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 16A 8SO
- Stock
- 14,285
- In Stock :
- 14,285
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 16A
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 8
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 2080pF @ 15V
- Fall Time (Typ) :
- 3.7 ns
- Transistor Application :
- SWITCHING
- Series :
- HEXFET®
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 4.5V
- Rds On (Max) @ Id, Vgs :
- 6.8m Ω @ 16A, 10V
- Continuous Drain Current (ID) :
- 16A
- Number of Pins :
- 8
- Voltage - Rated DC :
- 30V
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 2.25V @ 250μA
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 14 ns
- Power Dissipation-Max :
- 2.5W Ta
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Length :
- 5mm
- Height :
- 1.5mm
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 2.5W
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rise Time :
- 10ns
- Turn On Delay Time :
- 11 ns
- Element Configuration :
- Single
- Width :
- 4mm
- Threshold Voltage :
- 2.25V
- Published :
- 2005
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta
- Packaging :
- Tube
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IRF7805ZPBF

N-Channel Tube 6.8m Ω @ 16A, 10V ±20V 2080pF @ 15V 27nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
IRF7805ZPBF Overview
The maximum input capacitance of this device is 2080pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 16A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 14 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2.25V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IRF7805ZPBF Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
a threshold voltage of 2.25V
IRF7805ZPBF Applications
There are a lot of Infineon Technologies
IRF7805ZPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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