IRF7805TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

8

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

100A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

11m Ω @ 7A, 4.5V

ECCN Code :

EAR99

Vgs (Max) :

±12V

Power Dissipation-Max :

2.5W Ta

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

JEDEC-95 Code :

MS-012AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G8

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Transistor Element Material :

SILICON

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 5V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Terminal Form :

Gull wing

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.011Ohm

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ