IRF7805ATRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 5V

Supplier Device Package :

8-SO

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Series :

HEXFET®

Power Dissipation :

2.5W

Gate to Source Voltage (Vgs) :

12V

Drain to Source Voltage (Vdss) :

30V

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Rds On Max :

11 mΩ

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Number of Elements :

1

Mount :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Rise Time :

20ns

Published :

2004

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Length :

4.9784mm

Fall Time (Typ) :

16 ns

Height :

1.4986mm

Drain to Source Resistance :

11mOhm

RoHS Status :

RoHS Compliant

Turn On Delay Time :

16 ns

FET Type :

N-Channel

Current Rating :

13A

Rds On (Max) @ Id, Vgs :

11mOhm @ 7A, 4.5V

Vgs (Max) :

±12V

Width :

3.9878mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

30V

Continuous Drain Current (ID) :

13A

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Turn-Off Delay Time :

38 ns