IRF7805APBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

12V

Fall Time (Typ) :

16 ns

RoHS Status :

RoHS Compliant

Drain to Source Resistance :

11mOhm

Turn On Delay Time :

16 ns

Supplier Device Package :

8-SO

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

Mounting Type :

Surface Mount

FET Type :

N-Channel

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

20ns

Number of Pins :

8

Continuous Drain Current (ID) :

13A

Turn-Off Delay Time :

38 ns

Width :

3.9878mm

Series :

HEXFET®

Length :

4.9784mm

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Max Operating Temperature :

150°C

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

2.5W Ta

Number of Elements :

1

Voltage - Rated DC :

30V

Current Rating :

13A

Published :

2005

Min Operating Temperature :

-55°C

Vgs (Max) :

±12V

Power Dissipation :

2.5W

Rds On (Max) @ Id, Vgs :

11mOhm @ 7A, 4.5V

Radiation Hardening :

No

Rds On Max :

11 mΩ

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Height :

1.4986mm

Resistance :

11mOhm

Nominal Vgs :

3 V

Mount :

Surface Mount

Element Configuration :

Single