IRF7799L2TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

38m Ω @ 21A, 10V

Vgs (Max) :

±30V

Series :

HEXFET®

Threshold Voltage :

4V

Published :

2009

Package / Case :

DirectFET™ Isometric L8

Rise Time :

33.5ns

Length :

9.144mm

Number of Terminations :

9

Drain to Source Breakdown Voltage :

250V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

6714pF @ 25V

Pulsed Drain Current-Max (IDM) :

140A

ECCN Code :

EAR99

Turn-Off Delay Time :

73.9 ns

Current - Continuous Drain (Id) @ 25°C :

375A Tc

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

36.3 ns

Drain-source On Resistance-Max :

0.038Ohm

Power Dissipation-Max :

4.3W Ta 125W Tc

Mounting Type :

Surface Mount

Width :

7.112mm

FET Type :

N-Channel

Terminal Position :

BOTTOM

Power Dissipation :

125W

REACH SVHC :

No SVHC

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

11

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

325 mJ

RoHS Status :

RoHS Compliant

Height :

508μm

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

26.6 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

JESD-30 Code :

R-XBCC-N9

Drain Current-Max (Abs) (ID) :

375A

Continuous Drain Current (ID) :

6.6A