IRF7799L2TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Max Operating Temperature :

175°C

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Threshold Voltage :

4V

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

6.6A

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Input Capacitance :

6.714nF

Turn On Delay Time :

36.3 ns

Length :

9.144mm

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

250V

Drain to Source Voltage (Vdss) :

250V

Published :

2009

FET Type :

N-Channel

Height :

496μm

Rds On Max :

38 mΩ

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Power Dissipation :

125W

Fall Time (Typ) :

26.6 ns

Width :

7.1mm

Current - Continuous Drain (Id) @ 25°C :

375A Tc

Drain to Source Resistance :

32mOhm

Nominal Vgs :

4 V

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

38mOhm @ 21A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

6714pF @ 25V

Package / Case :

DirectFET™ Isometric L8

Series :

HEXFET®

REACH SVHC :

No SVHC

Supplier Device Package :

DIRECTFET L8

Number of Elements :

1

Resistance :

38mOhm

Recovery Time :

198 ns

Element Configuration :

Single

Mount :

Surface Mount

Rise Time :

33.5ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn-Off Delay Time :

73.9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

4.3W Ta 125W Tc

Number of Pins :

8