IRF7779L2TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Nominal Vgs :

4 V

REACH SVHC :

No SVHC

Height :

508μm

Recovery Time :

170 ns

Package / Case :

DirectFET™ Isometric L8

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

8

Drain to Source Voltage (Vdss) :

150V

Max Operating Temperature :

175°C

Published :

2009

Rise Time :

19ns

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Rds On Max :

11 mΩ

Length :

9.144mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Drain to Source Resistance :

9mOhm

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

375A Tc

Min Operating Temperature :

-55°C

Power Dissipation :

125W

Input Capacitance :

6.66nF

Rds On (Max) @ Id, Vgs :

11mOhm @ 40A, 10V

Continuous Drain Current (ID) :

11A

Vgs (Max) :

±20V

Threshold Voltage :

4V

Number of Elements :

1

Resistance :

11mOhm

Fall Time (Typ) :

12 ns

Turn-Off Delay Time :

36 ns

Turn On Delay Time :

16 ns

Input Capacitance (Ciss) (Max) @ Vds :

6660pF @ 25V

Series :

HEXFET®

FET Type :

N-Channel

Power Dissipation-Max :

3.3W Ta 125W Tc

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Width :

7.1mm

Supplier Device Package :

DIRECTFET L8

Drain to Source Breakdown Voltage :

150V