IRF7769L2TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

2.7 V

Factory Lead Time :

10 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

375A Tc

Number of Terminations :

9

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 74A, 10V

Number of Pins :

11

Terminal Finish :

TIN SILVER COPPER

Drain to Source Breakdown Voltage :

100V

Power Dissipation :

3.3W

Power Dissipation-Max :

3.3W Ta 125W Tc

Radiation Hardening :

No

Width :

7.112mm

Pulsed Drain Current-Max (IDM) :

500A

Case Connection :

DRAIN

FET Type :

N-Channel

Number of Channels :

1

Drain Current-Max (Abs) (ID) :

395A

Rise Time :

32ns

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Mount :

Surface Mount

Published :

2010

Turn On Delay Time :

44 ns

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING

Length :

9.144mm

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

676μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

92 ns

Mounting Type :

Surface Mount

Max Junction Temperature (Tj) :

175°C

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Continuous Drain Current (ID) :

20A

Package / Case :

DirectFET™ Isometric L8

JESD-30 Code :

R-XBCC-N9

Recovery Time :

112 ns

REACH SVHC :

No SVHC

Fall Time (Typ) :

41 ns

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0035Ohm

Avalanche Energy Rating (Eas) :

260 mJ

Input Capacitance (Ciss) (Max) @ Vds :

11560pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON