IRF7769L2TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

20A

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3.3W Ta 125W Tc

Resistance :

3.5mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Max Operating Temperature :

175°C

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant

Threshold Voltage :

2.7V

Rise Time :

32ns

Nominal Vgs :

2.7 V

Width :

7.1mm

Published :

2010

Rds On (Max) @ Id, Vgs :

3.5mOhm @ 74A, 10V

Supplier Device Package :

DIRECTFET L8

Fall Time (Typ) :

41 ns

Turn-Off Delay Time :

92 ns

Length :

9.144mm

Power Dissipation :

125W

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

375A Tc

Radiation Hardening :

No

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

11560pF @ 25V

Rds On Max :

3.5 mΩ

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

11

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

44 ns

Number of Elements :

1

Mounting Type :

Surface Mount

Drain to Source Resistance :

2.8MOhm

Height :

508μm

Package / Case :

DirectFET™ Isometric L8

Drain to Source Breakdown Voltage :

100V

Mount :

Surface Mount

Input Capacitance :

11.56nF

Element Configuration :

Single

Min Operating Temperature :

-55°C