IRF7759L2TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

9.144mm

FET Type :

N-Channel

Rise Time :

87ns

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

640A

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

3V

Gate to Source Voltage (Vgs) :

20V

Published :

2009

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

257 mJ

Transistor Application :

SWITCHING

Height :

508μm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0023Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

7.112mm

JESD-30 Code :

R-XBCC-N9

Power Dissipation :

125W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

JESD-609 Code :

e1

Series :

HEXFET®

Radiation Hardening :

No

Vgs (Max) :

±20V

Power Dissipation-Max :

3.3W Ta 125W Tc

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

12222pF @ 25V

Drain to Source Breakdown Voltage :

75V

Case Connection :

DRAIN

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Terminal Position :

BOTTOM

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 96A, 10V

Current - Continuous Drain (Id) @ 25°C :

26A Ta 375A Tc

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Number of Pins :

11

Turn-Off Delay Time :

80 ns

Turn On Delay Time :

18 ns

Continuous Drain Current (ID) :

26A

Number of Terminations :

9

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

33 ns

Package / Case :

DirectFET™ Isometric L8