IRF7759L2TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

125W

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Rise Time :

37ns

Continuous Drain Current (ID) :

26A

Supplier Device Package :

DIRECTFET L8

Package / Case :

DirectFET™ Isometric L8

Rds On Max :

2.3 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

12222pF @ 25V

Drain to Source Voltage (Vdss) :

75V

Power Dissipation-Max :

3.3W Ta 125W Tc

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Fall Time (Typ) :

33 ns

Length :

9.144mm

FET Type :

N-Channel

Nominal Vgs :

3 V

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

75V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

3V

RoHS Status :

RoHS Compliant

REACH SVHC :

No SVHC

Input Capacitance :

12.222nF

Recovery Time :

96 ns

Rds On (Max) @ Id, Vgs :

2.3mOhm @ 96A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

5

Max Operating Temperature :

175°C

Series :

HEXFET®

Turn-Off Delay Time :

80 ns

Drain to Source Resistance :

1.8MOhm

Resistance :

2.3MOhm

Turn On Delay Time :

18 ns

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

26A Ta 375A Tc

Width :

7.1mm

Vgs (Max) :

±20V

Height :

508μm

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V