IRF7749L2TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Rise Time :

43ns

Power Dissipation :

125W

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~175°C TJ

Supplier Device Package :

DIRECTFET L8

Lead Free :

Lead Free

Max Operating Temperature :

175°C

Series :

HEXFET®

Drain to Source Breakdown Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Fall Time (Typ) :

39 ns

Mounting Type :

Surface Mount

Nominal Vgs :

2.9 V

Resistance :

1.5mOhm

Current - Continuous Drain (Id) @ 25°C :

33A Ta 375A Tc

Mount :

Surface Mount

Drain to Source Resistance :

1.1MOhm

Rds On Max :

1.5 MΩ

FET Type :

N-Channel

Turn On Delay Time :

17 ns

Published :

2013

Package / Case :

DirectFET™ Isometric L8

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.5mOhm @ 120A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Length :

9.144mm

Power Dissipation-Max :

3.3W Ta 125W Tc

Height :

508μm

Recovery Time :

68 ns

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

78 ns

Input Capacitance :

12.32nF

Width :

7.1mm

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

12320pF @ 25V

Number of Pins :

8

Continuous Drain Current (ID) :

33A

Threshold Voltage :

2.9V

Number of Elements :

1