IRF7739L2TRPBF
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- Mfr.Part #
- IRF7739L2TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric L8
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 46A DIRECTFET
- Stock
- 4,374
- In Stock ：
- 4,374
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Input Capacitance (Ciss) (Max) @ Vds :
- 11880pF @ 25V
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- HEXFET®
- Height :
- 508μm
- JESD-609 Code :
- e1
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 11
- Rise Time :
- 71ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- TIN SILVER COPPER
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 46A
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 10V
- Turn On Delay Time :
- 21 ns
- Power Dissipation :
- 3.8W
- Package / Case :
- DirectFET™ Isometric L8
- Transistor Element Material :
- SILICON
- Width :
- 7.112mm
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 46A Ta 375A Tc
- Drain Current-Max (Abs) (ID) :
- 375A
- Published :
- 2007
- Avalanche Energy Rating (Eas) :
- 270 mJ
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 9
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-30 Code :
- R-XBCC-N9
- Length :
- 9.144mm
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Breakdown Voltage :
- 40V
- Power Dissipation-Max :
- 3.8W Ta 125W Tc
- FET Type :
- N-Channel
- Terminal Position :
- BOTTOM
- Turn-Off Delay Time :
- 56 ns
- Fall Time (Typ) :
- 42 ns
- Rds On (Max) @ Id, Vgs :
- 1m Ω @ 160A, 10V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRF7739L2TRPBF
N-Channel Tape & Reel (TR) 1m Ω @ 160A, 10V ±20V 11880pF @ 25V 330nC @ 10V DirectFET™ Isometric L8
IRF7739L2TRPBF Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 270 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 11880pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 46A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.A device can conduct a maximum continuous current of [375A] according to its drain current.It is [56 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 21 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRF7739L2TRPBF Features
the avalanche energy rating (Eas) is 270 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 56 ns
IRF7739L2TRPBF Applications
There are a lot of Infineon Technologies
IRF7739L2TRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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