IRF7739L2TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

42 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

DirectFET™ Isometric L8

Drain Current-Max (Abs) (ID) :

375A

Continuous Drain Current (ID) :

46A

Number of Elements :

1

Rise Time :

71ns

Number of Pins :

11

Current - Continuous Drain (Id) @ 25°C :

46A Ta 375A Tc

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

56 ns

Transistor Application :

SWITCHING

Series :

HEXFET®

Drain to Source Breakdown Voltage :

40V

Power Dissipation :

3.8W

Transistor Element Material :

SILICON

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Rds On (Max) @ Id, Vgs :

1m Ω @ 160A, 10V

Terminal Position :

BOTTOM

JESD-609 Code :

e1

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Length :

9.144mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

21 ns

Height :

508μm

Published :

2007

JESD-30 Code :

R-XBCC-N9

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

ECCN Code :

EAR99

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

270 mJ

Vgs (Max) :

±20V

Width :

7.112mm

Power Dissipation-Max :

3.8W Ta 125W Tc

Terminal Finish :

TIN SILVER COPPER

Input Capacitance (Ciss) (Max) @ Vds :

11880pF @ 25V

Lead Free :

Lead Free

Number of Terminations :

9