IRF7726TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mount :

Surface Mount

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

-2.5V

Terminal Form :

Gull wing

Turn-Off Delay Time :

227 ns

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

FET Type :

P-Channel

Power Dissipation :

1.79W

Rise Time :

25ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

3.048mm

Rds On (Max) @ Id, Vgs :

26m Ω @ 7A, 10V

Number of Terminations :

8

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

-7A

Resistance :

26mOhm

Current Rating :

-7A

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Turn On Delay Time :

15 ns

Series :

HEXFET®

Nominal Vgs :

-2.5 V

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Number of Pins :

8

Drain to Source Breakdown Voltage :

-30V

Fall Time (Typ) :

107 ns

Element Configuration :

Single

Published :

2000

Additional Feature :

ULTRA LOW RESISTANCE

Lead Free :

Contains Lead, Lead Free

Number of Elements :

1

Height :

910μm

ECCN Code :

EAR99

Radiation Hardening :

No

Width :

3.048mm

Input Capacitance (Ciss) (Max) @ Vds :

2204pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

7A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.79W Ta

Voltage - Rated DC :

-30V

Drain to Source Voltage (Vdss) :

30V