IRF7726

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

26m Ω @ 7A, 10V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

28A

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

30V

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

2204pF @ 25V

Power Dissipation-Max :

1.79W Ta

Additional Feature :

ULTRA LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Series :

HEXFET®

Transistor Application :

SWITCHING

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

JESD-30 Code :

R-PDSO-G8

Drain-source On Resistance-Max :

0.026ohm

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

yes

Published :

2000

Drain Current-Max (Abs) (ID) :

7A

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±20V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 250μA