IRF7707TRPBF
- Mfr.Part #
- IRF7707TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 7A 8TSSOP
- Stock
- 10,119
- In Stock :
- 10,119
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 4.5V
- Vgs (Max) :
- ±12V
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 20V
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- Supplier Device Package :
- 8-TSSOP
- Resistance :
- 22mOhm
- Mounting Type :
- Surface Mount
- Series :
- HEXFET®
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 12V
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Termination :
- SMD/SMT
- Rds On Max :
- 22 mΩ
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2361pF @ 15V
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 1.5W
- Drain to Source Resistance :
- 14.3mOhm
- Nominal Vgs :
- -1.2 V
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Input Capacitance :
- 2.361nF
- Max Operating Temperature :
- 150°C
- Power Dissipation-Max :
- 1.5W Ta
- Dual Supply Voltage :
- -20V
- Rds On (Max) @ Id, Vgs :
- 22mOhm @ 7A, 4.5V
- FET Type :
- P-Channel
- Drain to Source Breakdown Voltage :
- -20V
- Published :
- 2009
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- -7A
- Datasheets
- IRF7707TRPBF
P-Channel Tape & Reel (TR) 22mOhm @ 7A, 4.5V ±12V 2361pF @ 15V 47nC @ 4.5V 20V 8-TSSOP (0.173, 4.40mm Width)
IRF7707TRPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2361pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -20V.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 14.3mOhm.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).
IRF7707TRPBF Features
a continuous drain current (ID) of -7A
a drain-to-source breakdown voltage of -20V voltage
single MOSFETs transistor is 14.3mOhm
a 20V drain to source voltage (Vdss)
IRF7707TRPBF Applications
There are a lot of Infineon Technologies
IRF7707TRPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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