IRF7707

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-20V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Packaging :

Tube

Mount :

Surface Mount

Terminal Position :

Dual

Continuous Drain Current (ID) :

7A

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

2361pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Drain Current-Max (Abs) (ID) :

7A

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

28A

JEDEC-95 Code :

MO-153AA

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Drain-source On Resistance-Max :

0.022Ohm

Rds On (Max) @ Id, Vgs :

22m Ω @ 7A, 4.5V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs (Max) :

±12V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

HIGH RELIABILITY, ULTRA LOW RESISTANCE

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-20V

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

1

Lead Free :

Contains Lead

Published :

2007

Number of Terminations :

8

JESD-30 Code :

R-PDSO-G8

JESD-609 Code :

e3

RoHS Status :

Non-RoHS Compliant

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Power Dissipation :

1.5W

Time@Peak Reflow Temperature-Max (s) :

30

Current Rating :

-7A

Power Dissipation-Max :

1.5W Ta

Terminal Finish :

MATTE TIN