IRF7706TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

22mOhm @ 7A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

-7A

Power Dissipation :

1.51W

Drain to Source Voltage (Vdss) :

30V

FET Type :

P-Channel

RoHS Status :

RoHS Compliant

Supplier Device Package :

8-TSSOP

Input Capacitance (Ciss) (Max) @ Vds :

2211pF @ 25V

Length :

3.0988mm

Drain to Source Resistance :

36mOhm

Series :

HEXFET®

Rds On Max :

22 mΩ

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

122 ns

Turn-Off Delay Time :

244 ns

Resistance :

22mOhm

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Turn On Delay Time :

17 ns

Rise Time :

46ns

Lead Free :

Lead Free

Radiation Hardening :

No

Height :

1.0414mm

Number of Pins :

8

Mount :

Surface Mount

Number of Elements :

1

Published :

2009

Drain to Source Breakdown Voltage :

-30V

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Vgs (Max) :

±20V

Input Capacitance :

2.211nF

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.51W Ta

Width :

4.4958mm