IRF7706GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

8-TSSOP

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Power Dissipation-Max :

1.51W Ta

Rds On (Max) @ Id, Vgs :

22mOhm @ 7A, 10V

Rds On Max :

22 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

2211pF @ 25V

Min Operating Temperature :

-55°C

Vgs (Max) :

±20V

Published :

2009

Drain to Source Resistance :

36mOhm

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

-30V

Continuous Drain Current (ID) :

7A

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

150°C

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mounting Type :

Surface Mount

FET Type :

P-Channel

Input Capacitance :

2.211nF

Power Dissipation :

1.51W

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V