IRF7705TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Termination :

SMD/SMT

Rds On (Max) @ Id, Vgs :

18mOhm @ 8A, 10V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Height :

1.0414mm

Max Operating Temperature :

150°C

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2774pF @ 25V

Width :

4.4958mm

Drain to Source Resistance :

30mOhm

Power Dissipation :

1.5W

Number of Pins :

8

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.5V @ 250μA

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Published :

2008

Power Dissipation-Max :

1.5W Ta

Threshold Voltage :

-2.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

2

Dual Supply Voltage :

-30V

Length :

3.0988mm

REACH SVHC :

No SVHC

Fall Time (Typ) :

128 ns

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Rds On Max :

18 mΩ

Mount :

Surface Mount

Turn-Off Delay Time :

270 ns

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

-30V

Rise Time :

35ns

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Series :

HEXFET®

Supplier Device Package :

8-TSSOP

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 10V

Nominal Vgs :

-2.5 V

Continuous Drain Current (ID) :

-8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

18 ns

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Input Capacitance :

2.774nF

Resistance :

18mOhm