IRF7705GTRPBF

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Mfr.Part #
IRF7705GTRPBF
Manufacturer
Infineon Technologies
Package / Case
8-TSSOP (0.173, 4.40mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 8A 8TSSOP
Stock
34,275
In Stock :
34,275

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
8-TSSOP
Published :
2009
FET Type :
P-Channel
Rds On Max :
18 mΩ
RoHS Status :
RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs :
88nC @ 10V
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
8A
Drain to Source Voltage (Vdss) :
30V
Power Dissipation-Max :
1.5W Ta
Power Dissipation :
1.5W
Max Operating Temperature :
150°C
Drain to Source Resistance :
30mOhm
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
HEXFET®
Number of Pins :
8
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Package / Case :
8-TSSOP (0.173, 4.40mm Width)
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
2774pF @ 25V
Gate to Source Voltage (Vgs) :
20V
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Input Capacitance :
2.774nF
Min Operating Temperature :
-55°C
Rds On (Max) @ Id, Vgs :
18mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C :
8A Ta
Operating Temperature :
-55°C~150°C TJ
Drain to Source Breakdown Voltage :
-30V
Datasheets
IRF7705GTRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF7705GTRPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Package / Case:8-TSSOP (0.173, 4.40mm Width), Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, IRF7705GTRPBF pinout, IRF7705GTRPBF datasheet PDF, IRF7705GTRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF7705GTRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF7705GTRPBF


P-Channel Tape & Reel (TR) 18mOhm @ 8A, 10V ±20V 2774pF @ 25V 88nC @ 10V 30V 8-TSSOP (0.173, 4.40mm Width)

IRF7705GTRPBF Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2774pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-30V. And this device has -30V drain to source breakdown voltage. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 30mOhm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

IRF7705GTRPBF Features


a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of -30V voltage
single MOSFETs transistor is 30mOhm
a 30V drain to source voltage (Vdss)


IRF7705GTRPBF Applications


There are a lot of Infineon Technologies
IRF7705GTRPBF applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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