IRF7704TRPBF
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- Mfr.Part #
- IRF7704TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 4.6A 8TSSOP
- Stock
- 18,092
- In Stock ：
- 18,092
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 46mOhm @ 4.6A, 10V
- REACH SVHC :
- No SVHC
- Min Operating Temperature :
- -55°C
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.0414mm
- Nominal Vgs :
- -3 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- Power Dissipation :
- 1.5W
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- -40V
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 100 ns
- Number of Elements :
- 2
- Rds On Max :
- 46 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 1.5W Ta
- Turn-Off Delay Time :
- 190 ns
- Threshold Voltage :
- -3V
- Rise Time :
- 360ns
- Published :
- 2009
- Supplier Device Package :
- 8-TSSOP
- Resistance :
- 46mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3150pF @ 25V
- Drain to Source Resistance :
- 74mOhm
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Input Capacitance :
- 3.15nF
- Length :
- 3.0988mm
- Series :
- HEXFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 4.6A Ta
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- RoHS Status :
- RoHS Compliant
- Termination :
- SMD/SMT
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 4.5V
- Continuous Drain Current (ID) :
- -4.6A
- Drain to Source Voltage (Vdss) :
- 40V
- Width :
- 4.4958mm
- Dual Supply Voltage :
- -40V
- FET Type :
- P-Channel
- Number of Pins :
- 8
- Turn On Delay Time :
- 25 ns
- Radiation Hardening :
- No
- Datasheets
- IRF7704TRPBF
P-Channel Tape & Reel (TR) 46mOhm @ 4.6A, 10V ±20V 3150pF @ 25V 38nC @ 4.5V 40V 8-TSSOP (0.173, 4.40mm Width)
IRF7704TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3150pF @ 25V.This device conducts a continuous drain current (ID) of -4.6A, which is the maximum continuous current transistor can conduct.Using VGS=-40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 190 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 74mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRF7704TRPBF Features
a continuous drain current (ID) of -4.6A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 190 ns
single MOSFETs transistor is 74mOhm
a threshold voltage of -3V
a 40V drain to source voltage (Vdss)
IRF7704TRPBF Applications
There are a lot of Infineon Technologies
IRF7704TRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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