IRF7704GTRPBF

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Mfr.Part #
IRF7704GTRPBF
Manufacturer
Infineon Technologies
Package / Case
8-TSSOP (0.173, 4.40mm Width)
Datasheet
Download
Description
MOSFET P-CH 40V 4.6A 8TSSOP
Stock
5,522
In Stock :
5,522

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
8-TSSOP
Power Dissipation :
1.5W
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 4.5V
Number of Pins :
8
Max Operating Temperature :
150°C
Vgs(th) (Max) @ Id :
3V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Input Capacitance :
3.15nF
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
4.6A Ta
Min Operating Temperature :
-55°C
Gate to Source Voltage (Vgs) :
20V
Rds On Max :
46 mΩ
Published :
2008
Mount :
Surface Mount
Power Dissipation-Max :
1.5W Ta
FET Type :
P-Channel
Rds On (Max) @ Id, Vgs :
46mOhm @ 4.6A, 10V
Series :
HEXFET®
Package / Case :
8-TSSOP (0.173, 4.40mm Width)
RoHS Status :
RoHS Compliant
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Continuous Drain Current (ID) :
4.6A
Drain to Source Breakdown Voltage :
-40V
Drain to Source Voltage (Vdss) :
40V
Input Capacitance (Ciss) (Max) @ Vds :
3150pF @ 25V
Drain to Source Resistance :
74mOhm
Datasheets
IRF7704GTRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF7704GTRPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Mounting Type:Surface Mount, Package / Case:8-TSSOP (0.173, 4.40mm Width), IRF7704GTRPBF pinout, IRF7704GTRPBF datasheet PDF, IRF7704GTRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF7704GTRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF7704GTRPBF


P-Channel Tape & Reel (TR) 46mOhm @ 4.6A, 10V ±20V 3150pF @ 25V 38nC @ 4.5V 40V 8-TSSOP (0.173, 4.40mm Width)

IRF7704GTRPBF Overview


A device's maximal input capacitance is 3150pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 74mOhm.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

IRF7704GTRPBF Features


a continuous drain current (ID) of 4.6A
a drain-to-source breakdown voltage of -40V voltage
single MOSFETs transistor is 74mOhm
a 40V drain to source voltage (Vdss)


IRF7704GTRPBF Applications


There are a lot of Infineon Technologies
IRF7704GTRPBF applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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