IRF7704GTRPBF
- Mfr.Part #
- IRF7704GTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 4.6A 8TSSOP
- Stock
- 5,522
- In Stock :
- 5,522
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- 8-TSSOP
- Power Dissipation :
- 1.5W
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 4.5V
- Number of Pins :
- 8
- Max Operating Temperature :
- 150°C
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance :
- 3.15nF
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 4.6A Ta
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On Max :
- 46 mΩ
- Published :
- 2008
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 1.5W Ta
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 46mOhm @ 4.6A, 10V
- Series :
- HEXFET®
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 4.6A
- Drain to Source Breakdown Voltage :
- -40V
- Drain to Source Voltage (Vdss) :
- 40V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3150pF @ 25V
- Drain to Source Resistance :
- 74mOhm
- Datasheets
- IRF7704GTRPBF
P-Channel Tape & Reel (TR) 46mOhm @ 4.6A, 10V ±20V 3150pF @ 25V 38nC @ 4.5V 40V 8-TSSOP (0.173, 4.40mm Width)
IRF7704GTRPBF Overview
A device's maximal input capacitance is 3150pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 74mOhm.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRF7704GTRPBF Features
a continuous drain current (ID) of 4.6A
a drain-to-source breakdown voltage of -40V voltage
single MOSFETs transistor is 74mOhm
a 40V drain to source voltage (Vdss)
IRF7704GTRPBF Applications
There are a lot of Infineon Technologies
IRF7704GTRPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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