IRF7703TRPBF
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- Mfr.Part #
- IRF7703TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 6A 8TSSOP
- Stock
- 48,948
- In Stock ：
- 48,948
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 45mOhm
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 1.5W
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 28mOhm @ 6A, 10V
- Resistance :
- 28mOhm
- Nominal Vgs :
- -3 V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Published :
- 2009
- Number of Pins :
- 8
- Turn-Off Delay Time :
- 155 ns
- Min Operating Temperature :
- -55°C
- Series :
- HEXFET®
- Turn On Delay Time :
- 43 ns
- Power Dissipation-Max :
- 1.5W Ta
- Supplier Device Package :
- 8-TSSOP
- Continuous Drain Current (ID) :
- -6A
- Termination :
- SMD/SMT
- Drain to Source Breakdown Voltage :
- -40V
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 4.5V
- Rds On Max :
- 28 mΩ
- Current - Continuous Drain (Id) @ 25°C :
- 6A Ta
- Dual Supply Voltage :
- -40V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5220pF @ 25V
- RoHS Status :
- RoHS Compliant
- FET Type :
- P-Channel
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 40V
- Input Capacitance :
- 5.22nF
- Max Operating Temperature :
- 150°C
- Datasheets
- IRF7703TRPBF
P-Channel Tape & Reel (TR) 28mOhm @ 6A, 10V ±20V 5220pF @ 25V 62nC @ 4.5V 40V 8-TSSOP (0.173, 4.40mm Width)
IRF7703TRPBF Overview
A device's maximal input capacitance is 5220pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 155 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 45mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 43 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRF7703TRPBF Features
a continuous drain current (ID) of -6A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 155 ns
single MOSFETs transistor is 45mOhm
a 40V drain to source voltage (Vdss)
IRF7703TRPBF Applications
There are a lot of Infineon Technologies
IRF7703TRPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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