IRF7703GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150°C

Power Dissipation :

1.5W

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

-3 V

Power Dissipation-Max :

1.5W Ta

FET Type :

P-Channel

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

5220pF @ 25V

Number of Pins :

8

Mounting Type :

Surface Mount

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

-40V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Min Operating Temperature :

-55°C

Input Capacitance :

5.22nF

Supplier Device Package :

8-TSSOP

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

40V

Continuous Drain Current (ID) :

6A

REACH SVHC :

No SVHC

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Rds On Max :

28 mΩ

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Resistance :

45mOhm

Rds On (Max) @ Id, Vgs :

28mOhm @ 6A, 10V