IRF7702TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.5W Tc

Height :

1.0414mm

Input Capacitance :

3.47nF

Packaging :

Tape and Reel (TR)

Resistance :

14mOhm

Drain to Source Resistance :

14mOhm

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±8V

Rds On Max :

14 mΩ

Rise Time :

21ns

Mounting Type :

Surface Mount

Width :

4.4958mm

Number of Elements :

1

FET Type :

P-Channel

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Turn-Off Delay Time :

320 ns

Fall Time (Typ) :

250 ns

Input Capacitance (Ciss) (Max) @ Vds :

3470pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 4.5V

Turn On Delay Time :

16 ns

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Published :

2006

Gate to Source Voltage (Vgs) :

8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

8-TSSOP

Rds On (Max) @ Id, Vgs :

14mOhm @ 8A, 4.5V

Continuous Drain Current (ID) :

-8A

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

12V

Number of Pins :

8

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-12V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Length :

3.0988mm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Max Operating Temperature :

150°C

Power Dissipation :

1.5W

Lead Free :

Lead Free