IRF7701TRPBF
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- Mfr.Part #
- IRF7701TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 10A 8TSSOP
- Stock
- 906
- In Stock ：
- 906
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- -10A
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Supplier Device Package :
- 8-TSSOP
- Vgs (Max) :
- ±8V
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 8V
- RoHS Status :
- RoHS Compliant
- FET Type :
- P-Channel
- Resistance :
- 11mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5050pF @ 10V
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- -12V
- Max Operating Temperature :
- 150°C
- Number of Elements :
- 1
- Input Capacitance :
- 5.05nF
- Drain to Source Resistance :
- 11mOhm
- Power Dissipation :
- 1.5W
- Published :
- 2006
- Number of Pins :
- 8
- Series :
- HEXFET®
- Power Dissipation-Max :
- 1.5W Ta
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Rds On Max :
- 11 mΩ
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- Drain to Source Voltage (Vdss) :
- 12V
- Rds On (Max) @ Id, Vgs :
- 11mOhm @ 10A, 4.5V
- Datasheets
- IRF7701TRPBF
P-Channel Tape & Reel (TR) 11mOhm @ 10A, 4.5V ±8V 5050pF @ 10V 100nC @ 4.5V 12V 8-TSSOP (0.173, 4.40mm Width)
IRF7701TRPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5050pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -10A amps.In this device, the drain-source breakdown voltage is -12V and VGS=-12V, so the drain-source breakdown voltage is -12V in this case.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 11mOhm.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.To operate this transistor, you will need a 12V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
IRF7701TRPBF Features
a continuous drain current (ID) of -10A
a drain-to-source breakdown voltage of -12V voltage
single MOSFETs transistor is 11mOhm
a 12V drain to source voltage (Vdss)
IRF7701TRPBF Applications
There are a lot of Infineon Technologies
IRF7701TRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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