IRF7701GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Number of Elements :

1

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Gate to Source Voltage (Vgs) :

8V

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Nominal Vgs :

-1.2 V

Power Dissipation :

1.5W

Vgs (Max) :

±8V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Power Dissipation-Max :

1.5W Ta

Input Capacitance :

5.05nF

Published :

2009

FET Type :

P-Channel

Series :

HEXFET®

Continuous Drain Current (ID) :

10A

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Min Operating Temperature :

-55°C

Rds On Max :

11 mΩ

Supplier Device Package :

8-TSSOP

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

11mOhm @ 10A, 4.5V

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

5050pF @ 10V

Resistance :

11mOhm

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-12V

Drain to Source Voltage (Vdss) :

12V

Drain to Source Resistance :

11mOhm