IRF7700GTRPBF
- Mfr.Part #
- IRF7700GTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 8.6A 8TSSOP
- Stock
- 33,324
- In Stock :
- 33,324
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 1.5W Ta
- Mount :
- Surface Mount
- Power Dissipation :
- 1.5W
- FET Type :
- P-Channel
- Drain to Source Breakdown Voltage :
- -20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4300pF @ 15V
- Continuous Drain Current (ID) :
- 8.6A
- Published :
- 2009
- Vgs (Max) :
- ±12V
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 20V
- Gate to Source Voltage (Vgs) :
- 12V
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Nominal Vgs :
- -1.2 V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Input Capacitance :
- 4.3nF
- Current - Continuous Drain (Id) @ 25°C :
- 8.6A Ta
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 15mOhm @ 8.6A, 4.5V
- Lead Free :
- Lead Free
- Series :
- HEXFET®
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Rds On Max :
- 15 mΩ
- Gate Charge (Qg) (Max) @ Vgs :
- 89nC @ 5V
- Supplier Device Package :
- 8-TSSOP
- Drain to Source Resistance :
- 15mOhm
- Datasheets
- IRF7700GTRPBF
P-Channel Tape & Reel (TR) 15mOhm @ 8.6A, 4.5V ±12V 4300pF @ 15V 89nC @ 5V 20V 8-TSSOP (0.173, 4.40mm Width)
IRF7700GTRPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4300pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8.6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-20V. And this device has -20V drain to source breakdown voltage. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 15mOhm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.
IRF7700GTRPBF Features
a continuous drain current (ID) of 8.6A
a drain-to-source breakdown voltage of -20V voltage
single MOSFETs transistor is 15mOhm
a 20V drain to source voltage (Vdss)
IRF7700GTRPBF Applications
There are a lot of Infineon Technologies
IRF7700GTRPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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