IRF7700GTRPBF

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Mfr.Part #
IRF7700GTRPBF
Manufacturer
Infineon Technologies
Package / Case
8-TSSOP (0.173, 4.40mm Width)
Datasheet
Download
Description
MOSFET P-CH 20V 8.6A 8TSSOP
Stock
33,324
In Stock :
33,324

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Power Dissipation-Max :
1.5W Ta
Mount :
Surface Mount
Power Dissipation :
1.5W
FET Type :
P-Channel
Drain to Source Breakdown Voltage :
-20V
Input Capacitance (Ciss) (Max) @ Vds :
4300pF @ 15V
Continuous Drain Current (ID) :
8.6A
Published :
2009
Vgs (Max) :
±12V
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
20V
Gate to Source Voltage (Vgs) :
12V
Max Operating Temperature :
150°C
Min Operating Temperature :
-55°C
Nominal Vgs :
-1.2 V
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
REACH SVHC :
No SVHC
Vgs(th) (Max) @ Id :
1.2V @ 250µA
Input Capacitance :
4.3nF
Current - Continuous Drain (Id) @ 25°C :
8.6A Ta
RoHS Status :
RoHS Compliant
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
8
Rds On (Max) @ Id, Vgs :
15mOhm @ 8.6A, 4.5V
Lead Free :
Lead Free
Series :
HEXFET®
Package / Case :
8-TSSOP (0.173, 4.40mm Width)
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Rds On Max :
15 mΩ
Gate Charge (Qg) (Max) @ Vgs :
89nC @ 5V
Supplier Device Package :
8-TSSOP
Drain to Source Resistance :
15mOhm
Datasheets
IRF7700GTRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF7700GTRPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Package / Case:8-TSSOP (0.173, 4.40mm Width), IRF7700GTRPBF pinout, IRF7700GTRPBF datasheet PDF, IRF7700GTRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF7700GTRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF7700GTRPBF


P-Channel Tape & Reel (TR) 15mOhm @ 8.6A, 4.5V ±12V 4300pF @ 15V 89nC @ 5V 20V 8-TSSOP (0.173, 4.40mm Width)

IRF7700GTRPBF Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4300pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8.6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-20V. And this device has -20V drain to source breakdown voltage. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 15mOhm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.

IRF7700GTRPBF Features


a continuous drain current (ID) of 8.6A
a drain-to-source breakdown voltage of -20V voltage
single MOSFETs transistor is 15mOhm
a 20V drain to source voltage (Vdss)


IRF7700GTRPBF Applications


There are a lot of Infineon Technologies
IRF7700GTRPBF applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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