IRF7665S2TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

BOTTOM

Height :

508μm

Input Capacitance (Ciss) (Max) @ Vds :

515pF @ 25V

Package / Case :

DirectFET™ Isometric SB

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Published :

2009

Number of Pins :

3

Vgs (Max) :

±20V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

100V

Drain-source On Resistance-Max :

0.062Ohm

Turn On Delay Time :

3.8 ns

Pulsed Drain Current-Max (IDM) :

58A

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

62m Ω @ 8.9A, 10V

JESD-609 Code :

e3

Rise Time :

6.4ns

Length :

4.826mm

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

3.9624mm

Vgs(th) (Max) @ Id :

5V @ 25μA

Threshold Voltage :

4V

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

14.4A

Case Connection :

DRAIN

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Turn-Off Delay Time :

7.1 ns

Power Dissipation-Max :

2.4W Ta 30W Tc

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

JESD-30 Code :

R-XBCC-N2

Power Dissipation :

30W

Number of Terminations :

2

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta 14.4A Tc

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

4 V

Factory Lead Time :

13 Weeks

ECCN Code :

EAR99

Fall Time (Typ) :

3.6 ns