IRF7665S2TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Package / Case :

DirectFET™ Isometric SB

Max Operating Temperature :

175°C

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

62 mΩ

Resistance :

62mOhm

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Published :

2009

Input Capacitance :

515pF

RoHS Status :

RoHS Compliant

Drain to Source Resistance :

51mOhm

Rds On (Max) @ Id, Vgs :

62mOhm @ 8.9A, 10V

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

508μm

Rise Time :

6.4ns

Threshold Voltage :

4V

Turn-Off Delay Time :

7.1 ns

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

515pF @ 25V

Length :

4.826mm

Width :

3.95mm

Vgs(th) (Max) @ Id :

5V @ 25μA

Fall Time (Typ) :

3.6 ns

Turn On Delay Time :

3.8 ns

Min Operating Temperature :

-55°C

Number of Pins :

4

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta 14.4A Tc

Nominal Vgs :

4 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

100V

FET Type :

N-Channel

Radiation Hardening :

No

Power Dissipation :

2.4W

Number of Elements :

1

Mount :

Surface Mount

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Element Configuration :

Single

Continuous Drain Current (ID) :

14.4mA

Supplier Device Package :

DIRECTFET SB

Power Dissipation-Max :

2.4W Ta 30W Tc