IRF7663TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

-8.2A

Voltage - Rated DC :

-20V

Radiation Hardening :

No

Drain to Source Resistance :

20mOhm

Rds On Max :

20 mΩ

Min Operating Temperature :

-55°C

Power Dissipation-Max :

1.8W Ta

Rise Time :

100ns

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Mount :

Surface Mount

Current Rating :

-8.2A

Power Dissipation :

1.8W

Rds On (Max) @ Id, Vgs :

20mOhm @ 7A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

2520pF @ 10V

Number of Pins :

8

FET Type :

P-Channel

Number of Elements :

1

Published :

2005

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Input Capacitance :

2.52nF

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 5V

Lead Free :

Lead Free

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

8.2A Ta

Drain to Source Breakdown Voltage :

-20V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Supplier Device Package :

Micro8™

Drain to Source Voltage (Vdss) :

20V

Gate to Source Voltage (Vgs) :

12V

Vgs (Max) :

±12V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)