IRF7663

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

20mOhm

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

20V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Mount :

Surface Mount

Row Spacing :

4.24 mm

Rise Time :

100ns

Vgs (Max) :

±12V

Rds On (Max) @ Id, Vgs :

20mOhm @ 7A, 4.5V

Width :

3.05mm

Number of Pins :

8

RoHS Status :

Non-RoHS Compliant

Termination :

SMD/SMT

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

REACH SVHC :

No SVHC

Power Dissipation :

1.8W

Supplier Device Package :

Micro8™

Max Operating Temperature :

150°C

Voltage - Rated DC :

-20V

Power Dissipation-Max :

1.8W Ta

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Current Rating :

-8.2A

Mounting Type :

Surface Mount

Threshold Voltage :

-1.2V

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

8.2A Ta

Continuous Drain Current (ID) :

8.2A

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

2520pF @ 10V

Input Capacitance :

2.52nF

Lead Pitch :

650μm

Packaging :

Tube

Series :

HEXFET®

Reverse Recovery Time :

70 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

20 mΩ