IRF7607TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

1.2V

Drain to Source Breakdown Voltage :

20V

Power Dissipation-Max :

1.8W Ta

Height :

860μm

Mounting Type :

Surface Mount

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Drain-source On Resistance-Max :

0.03Ohm

Voltage - Rated DC :

20V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

16 ns

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 15V

Vgs (Max) :

±12V

Published :

2001

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Width :

3mm

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Length :

3mm

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Additional Feature :

High Reliability

Continuous Drain Current (ID) :

6.5A

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

50A

Rds On (Max) @ Id, Vgs :

30m Ω @ 6.5A, 4.5V

Turn On Delay Time :

8.5 ns

Turn-Off Delay Time :

36 ns

Mount :

Surface Mount

Terminal Form :

Gull wing

Number of Pins :

8

Radiation Hardening :

No

Power Dissipation :

1.8W

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Rise Time :

11ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Elements :

1

REACH SVHC :

No SVHC

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

12V

Number of Terminations :

8

Current Rating :

6.5A

Terminal Position :

Dual