IRF7607TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

20V

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Drain-source On Resistance-Max :

0.03Ohm

Voltage - Rated DC :

20V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Power Dissipation :

1.8W

Radiation Hardening :

No

Width :

3mm

Transistor Application :

SWITCHING

Length :

3mm

Additional Feature :

High Reliability

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 15V

Power Dissipation-Max :

1.8W Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Rds On (Max) @ Id, Vgs :

30m Ω @ 6.5A, 4.5V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

12V

Height :

860μm

Continuous Drain Current (ID) :

6.5A

Number of Terminations :

8

Turn On Delay Time :

8.5 ns

Series :

HEXFET®

Element Configuration :

Single

Published :

2001

Number of Elements :

1

Mount :

Surface Mount

Terminal Form :

Gull wing

Fall Time (Typ) :

16 ns

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Threshold Voltage :

1.2V

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Current Rating :

6.5A

Lead Free :

Contains Lead

Pulsed Drain Current-Max (IDM) :

50A

Rise Time :

11ns

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

36 ns

FET Type :

N-Channel

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC