IRF7607

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±12V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

8

Additional Feature :

ULTRA LOW RESISTANCE

Published :

2001

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

30m Ω @ 6.5A, 4.5V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

1.8W Ta

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

50A

Terminal Position :

Dual

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Drain-source On Resistance-Max :

0.03Ohm

Surface Mount :

yes

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

S-PDSO-G8

Series :

HEXFET®

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 15V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Drain Current-Max (Abs) (ID) :

6.5A

DS Breakdown Voltage-Min :

20V