IRF7606TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

29A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Vgs (Max) :

±20V

Published :

2002

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Continuous Drain Current (ID) :

-3.6A

Resistance :

90mOhm

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Rise Time :

20ns

Terminal Position :

Dual

Power Dissipation-Max :

1.8W Ta

Series :

HEXFET®

JESD-30 Code :

S-PDSO-G8

FET Type :

P-Channel

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Terminations :

8

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Current Rating :

-3.6A

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Voltage (Vdss) :

30V

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.4A, 10V

Lead Free :

Contains Lead

Power Dissipation :

1.8W

Terminal Finish :

Matte Tin (Sn)

Voltage - Rated DC :

-30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING