IRF7604TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.8W Ta

Element Configuration :

Single

FET Type :

P-Channel

Threshold Voltage :

-700mV

RoHS Status :

RoHS Compliant

Vgs (Max) :

±12V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Rds On (Max) @ Id, Vgs :

90mOhm @ 2.4A, 4.5V

Supplier Device Package :

Micro8™

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

31 ns

Continuous Drain Current (ID) :

-3.6A

Drain to Source Resistance :

90mOhm

Gate to Source Voltage (Vgs) :

12V

Number of Pins :

8

Min Operating Temperature :

-55°C

Turn On Delay Time :

17 ns

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 15V

Rds On Max :

90 mΩ

Nominal Vgs :

-700 mV

Fall Time (Typ) :

38 ns

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Lead Free :

Lead Free

Power Dissipation :

1.8W

Vgs(th) (Max) @ Id :

700mV @ 250μA

Series :

HEXFET®

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Published :

2005

Input Capacitance :

590pF

Max Operating Temperature :

150°C

Resistance :

90mOhm

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Drain to Source Breakdown Voltage :

-20V

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Rise Time :

53ns