IRF7603TRPBF
- Mfr.Part #
- IRF7603TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 5.6A MICRO8
- Stock
- 1,653
- In Stock :
- 1,653
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 5.6A Ta
- Input Capacitance :
- 520pF
- Published :
- 2005
- Gate to Source Voltage (Vgs) :
- 20V
- Min Operating Temperature :
- -55°C
- Current Rating :
- 5.6A
- Operating Temperature :
- -55°C~150°C TJ
- Rds On Max :
- 35 mΩ
- Drain to Source Voltage (Vdss) :
- 30V
- Rise Time :
- 28ns
- Package / Case :
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 520pF @ 25V
- Drain to Source Resistance :
- 35mOhm
- Series :
- HEXFET®
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 35mOhm @ 3.7A, 10V
- Drain to Source Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 1.8W Ta
- Continuous Drain Current (ID) :
- 5.6A
- Fall Time (Typ) :
- 12 ns
- Turn On Delay Time :
- 5.7 ns
- Turn-Off Delay Time :
- 18 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.8W
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 30V
- Max Operating Temperature :
- 150°C
- Supplier Device Package :
- Micro8™
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- RoHS Status :
- RoHS Compliant
- Datasheets
- IRF7603TRPBF

N-Channel Tape & Reel (TR) 35mOhm @ 3.7A, 10V ±20V 520pF @ 25V 27nC @ 10V 30V 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
IRF7603TRPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 520pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 18 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 35mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5.7 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRF7603TRPBF Features
a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 35mOhm
a 30V drain to source voltage (Vdss)
IRF7603TRPBF Applications
There are a lot of Infineon Technologies
IRF7603TRPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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