IRF7601TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

5.7A Ta

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Gate to Source Voltage (Vgs) :

12V

Height :

860μm

Transistor Element Material :

SILICON

FET Type :

N-Channel

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

35m Ω @ 3.8A, 4.5V

Mount :

Surface Mount

Rise Time :

47ns

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.035Ohm

Width :

3mm

Terminal Position :

Dual

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Power Dissipation :

1.8W

Turn On Delay Time :

5.1 ns

Number of Pins :

8

Additional Feature :

ULTRA LOW RESISTANCE

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

700mV @ 250μA

Vgs (Max) :

±12V

Drain to Source Breakdown Voltage :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 15V

Series :

HEXFET®

Continuous Drain Current (ID) :

5.7A

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

24 ns

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

30A

Length :

3mm

Power Dissipation-Max :

1.8W Ta

Fall Time (Typ) :

32 ns

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)