IRF7601TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

700mV @ 250μA

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PDSO-G8

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.035Ohm

Rds On (Max) @ Id, Vgs :

35m Ω @ 3.8A, 4.5V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 15V

Drain Current-Max (Abs) (ID) :

5.7A

Packaging :

Cut Tape (CT)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

5.7A Ta

Surface Mount :

yes

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pulsed Drain Current-Max (IDM) :

30A

DS Breakdown Voltage-Min :

20V

RoHS Status :

Non-RoHS Compliant

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Number of Elements :

1

Published :

1997

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V