IRF7534D1PBF
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- Mfr.Part #
- IRF7534D1PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4.3A MICRO8
- Stock
- 2,765
- In Stock ：
- 2,765
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Supplier Device Package :
- Micro8™
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 3.05mm
- FET Type :
- P-Channel
- Vgs (Max) :
- ±12V
- Turn On Delay Time :
- 10 ns
- Mount :
- Surface Mount
- Published :
- 2005
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- -1.2V
- Series :
- FETKY™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A Ta
- Height :
- 910μm
- Rds On (Max) @ Id, Vgs :
- 55mOhm @ 4.3A, 4.5V
- Gate to Source Voltage (Vgs) :
- 12V
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- Width :
- 3.05mm
- Drain to Source Voltage (Vdss) :
- 20V
- Number of Pins :
- 8
- Rds On Max :
- 55 mΩ
- Continuous Drain Current (ID) :
- 4.3A
- FET Feature :
- Schottky Diode (Isolated)
- Input Capacitance :
- 1.066nF
- Turn-Off Delay Time :
- 60 ns
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1066pF @ 10V
- Drain to Source Resistance :
- 55mOhm
- Min Operating Temperature :
- -55°C
- Lead Free :
- Lead Free
- Package / Case :
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Power Dissipation-Max :
- 1.25W Ta
- REACH SVHC :
- No SVHC
- Datasheets
- IRF7534D1PBF
P-Channel Tube 55mOhm @ 4.3A, 4.5V ±12V 1066pF @ 10V 15nC @ 5V 20V 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
IRF7534D1PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1066pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.3A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 60 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 55mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-1.2V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (2.5V 4.5V) reduces this device's overall power consumption.
IRF7534D1PBF Features
a continuous drain current (ID) of 4.3A
the turn-off delay time is 60 ns
single MOSFETs transistor is 55mOhm
a threshold voltage of -1.2V
a 20V drain to source voltage (Vdss)
IRF7534D1PBF Applications
There are a lot of Infineon Technologies
IRF7534D1PBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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