IRF7526D1TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

9.3 ns

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Height :

910μm

Drain Current-Max (Abs) (ID) :

2A

Continuous Drain Current (ID) :

-2A

FET Feature :

Schottky Diode (Isolated)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Published :

1999

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Series :

FETKY™

Mount :

Surface Mount

Rise Time :

12ns

Vgs (Max) :

±20V

Turn-Off Delay Time :

19 ns

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.2A, 10V

Power Dissipation :

800mW

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Number of Pins :

8

Mounting Type :

Surface Mount

Length :

3.048mm

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Voltage (Vdss) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Turn On Delay Time :

9.7 ns

Drain to Source Breakdown Voltage :

-30V

Radiation Hardening :

No

Power Dissipation-Max :

1.25W Ta

Width :

3.048mm