IRF7526D1
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- Mfr.Part #
- IRF7526D1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 2A MICRO8
- Stock
- 49,921
- In Stock ：
- 49,921
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- Schottky Diode (Isolated)
- FET Type :
- P-Channel
- Power Dissipation-Max :
- 1.25W Ta
- Package / Case :
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 1.2A, 10V
- Series :
- FETKY™
- Current Rating :
- -2A
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Lead Free :
- Contains Lead
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Mount :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 180pF @ 25V
- Continuous Drain Current (ID) :
- 2A
- Voltage - Rated DC :
- -30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Published :
- 1999
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRF7526D1
P-Channel Tube 200m Ω @ 1.2A, 10V ±20V 180pF @ 25V 11nC @ 10V 30V 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
IRF7526D1 Description
IRF7526D1 is a -30V FETKY - MOSFET and Schottky Diode manufactured by Infineon. The Infineon IRF7526D1 utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phones, PDAs, etc. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET IRF7526D1 is in the Micro8TM package with 1.25w power dissipation.
IRF7526D1 Features
-
Co-packaged HEXFET Power MOSFET and Schottky Diode
-
P-Channel HEXFET
-
Low VF Schottky Rectifier
-
Generation 5 Technology
-
Micro8TM Footprint
IRF7526D1 Applications
-
cell phone
-
PDA
-
Home theater & entertainment
-
Connected peripherals & printers
-
Data storage
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