IRF7524D1GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 4.5V

Turn On Delay Time :

9.1 ns

Rds On Max :

270 mΩ

Max Operating Temperature :

150°C

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Schottky Diode (Isolated)

Continuous Drain Current (ID) :

1.7A

Drain to Source Resistance :

270mOhm

Turn-Off Delay Time :

38 ns

Power Dissipation-Max :

1.25W Ta

Height :

939.8μm

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

-20V

Length :

3.0988mm

Vgs(th) (Max) @ Id :

700mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 15V

Width :

3.0988mm

FET Type :

P-Channel

Series :

FETKY™

Rise Time :

35ns

Number of Pins :

8

Vgs (Max) :

±12V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Supplier Device Package :

8-uSMD

Fall Time (Typ) :

43 ns

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Power Dissipation :

1.25W

Rds On (Max) @ Id, Vgs :

270mOhm @ 1.2A, 4.5V

Input Capacitance :

240pF

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount